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(R)
ACS110-7SN/SB2
AC LINE SWITCH
ASDTM AC Switch Family
MAIN APPLICATIONS AC static switching in appliance control systems Drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater
s s
COM OUT COM G
FEATURES
s s
SOT-223 ACS110-7SN
s
s
s
s
Blocking voltage : VDRM / VRRM = +/-700V Avalanche controlled : VCL typ = 1100 V Nominal conducting current : IT(RMS) = 1A Gate triggering current : IGT < 10 mA Switch integrated driver High noise immunity : static dV/dt >500V/s
G
OUT COM COM COM COM
BENEFITS No external protection snubber or varistor needed Enables equipment to meet IEC 61000-4-5 & IEC 335-1 (DIL-8 package) Reduces component count up to 80 % Interfaces directly with the microcontroller Eliminates any gate kick back on the microcontroller Allows straightforward connection of several ACSTM on same cooling pad (SOT-223)
s s s s s s
DIL-8 ACS110-7SB2
FUNCTIONAL DIAGRAM
OUT
DESCRIPTION The ACS110 belongs to the AC line switch family built around the ASDTM concept. This high performance switch circuit is able to control a load up to 1 A. The ACSTM switch embeds a high voltage clamping structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin.
S ON D
COM
G
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ACS110-7SN/SB2
ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol VDRM / VRRM IT(RMS) ITSM It dI/dt VPP Tstg Tj Tl
2
Parameter Repetitive peak off-state voltage RMS on-state current full cycle sine wave 50 to 60 Hz Non repetitive surge peak on-state current Tj initial = 25C, full cycle sine wave Fusing capability Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) Non repetitive line peak pulse voltage Storage temperature range Operating junction temperature range Maximum lead soldering temperature during 10s Tj = 125C SOT-223 DIL-8 Tj = -10 C Ttab = 105 C Tlead = 110 C F =50 Hz F =60 Hz tp = 10ms F = 120 Hz note 1
Value 700 1 8 11 0.35 50 2 - 40 to + 150 - 30 to + 125 260
Unit V A A A As A/s kV C C C
Note 1: according to test described by IEC61000-4-5 standard & Figure 3.
GATE CHARACTERISTICS (maximum values)
Symbol PG (AV) IGM VGM Peak gate current (tp = 20s) Peak positive gate voltage (in respect to pin COM) Parameter Average gate power dissipation Value 0.1 1 5 Unit W A V
THERMAL RESISTANCES
Symbol Rth (j-a) Rth (j-l) Parameter Junction to ambient S = 5cm Junction to tab/lead for full cycle sine wave conduction SOT-223 DIL-8 SOT-223 DIL-8
S = Copper surface under Tab
Value 60 60 20 15
Unit C/W C/W C/W C/W
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PARAMETER DESCRIPTION
Parameter Symbol IGT VGT VGD IH IL VTM VTO Rd IDRM / IRRM dV/dt (dV/dt)c (dI/dt)c VCL ICL Triggering gate current Triggering gate voltage Non-triggering gate voltage Holding current Latching current Peak on-state voltage drop On state threshold voltage On state dynamic resistance Maximum forward or reverse leakage current Critical rate of rise of off-state voltage Critical rate of rise of commutating off-state voltage Critical rate of decrease of commutating on-state current Clamping voltage Clamping current Parameter description
ELECTRICAL CHARACTERISTICS For either positive or negative polarity of pin OUT voltage respect to pin COM voltage excepted note 3*.
Symbol IGT VGT VGD IH IL VTM VTO Rd IDRM / IRRM dV/dt (dI/dt)c VCL VOUT = 700V VOUT=12V (DC) VOUT=12V (DC) Test Conditions RL=140 RL=140 QII - QIII QII - QIII Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C tp=380s Tj=25C Tj=125C Tj=125C Tj=25C Tj=125C VOUT=460V gate open (dV/dt)c = 20V/s ICL = 1mA tp=1ms Tj=110C Tj=125C Tj=25C MAX MAX MIN MAX MAX MAX MAX MAX MAX MAX MIN MIN TYP Values 10 1 0.15 45 65 1.3 0.8 300 2 200 500 0.5 1100 V/s A/ms V Unit mA V V mA mA V V m A
VOUT=VDRM RL=3.3k IOUT= 100mA gate open IG= 20mA IOUT = 1.4A
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AC LINE SWITCH BASIC APPLICATION The ACS110 device is well adapted to Washing machine, dishwasher, tumble drier, refrigerator, water heaters,air-conditioning systems, microwave ovens and other cookware. It has been designed especially to switch on & off low power loads such as solenoid, valve, relay, dispenser, micro-motor, pump, fan and defrost heaters. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load This ACSTM switch is triggered with a negative gate current flowing out of the gate pin G. It can be driven directly by the digital controller through a resistor as shown on the typical application diagram. Several ACS110 devices can be connected on the same cooling PCB pad, which is the COM pin. Thanks to its thermal and turn off commutation performances, the ACS110 switch is able to drive with no turn off additional snubber an inductive load up to 1 A. TYPICAL APPLICATION DIAGRAM
L LOAD
L
AC MAINS
M R
N
OUT
ACS110
S ON D
COM
G
ST72 MCU
- Vcc
HIGH INDUCTIVE SWITCH-OFF OPERATION At the end of the last conduction half-cycle, the load current reaches the holding current level IH , and the ACSTM switch turns off. Because of the inductance L of the load, the current flows then through the avalanche diode D and decreases linearly to zero. During this time, the voltage across the switch is limited to the clamping voltage VCL. The energy stored in the inductance of the load depends on the holding current IH and the inductance (up to 10 H); it can reach about 10 mJ and is dissipated in the clamping diode section. The ACS switch sustains the turn off energy because its clamping section is designed for that purpose.
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ACS110-7SN/SB2
Fig. A: Turn-off operation of the ACS110 switch with an electro-valve: waveform of the pin OUT current IOUT and Out-COM voltage VOUT. Fig. B: ACS110 switch static characteristic.
IOUT
IH VCL
VOUT
AC LINE TRANSIENT VOLTAGE RUGGEDNESS The ACS110 switch is able to sustain safely the AC line transient voltages either by clamping the low energy spikes or by breaking over under high energy shocks, even with high turn-on current rises. The test circuit of the figure C is representative of the final ACS application and is also used to stress the ACS switch according to the IEC 61000-4-5 standard conditions. Thanks to the load, the ACS switch sustains the voltage spikes up to 2 kV above the peak line voltage. It will break over safely even on resistive load where the turn on current rise is high as shown on figure D. Such non repetitive test can be done 10 times on each AC line voltage polarity. Fig. C: Overvoltage ruggedness test circuit for resistive and inductive loads according to IEC61000-4-5 standards. R = 150, L = 10H, VPP = 2kV. Fig. D: Current and Voltage of the ACS110 during IEC61000-4-5 standard test with R = 150, L = 10H & VPP = 2kV.
R
L
OUT ACSxx
S
SURGE VOLTAGE AC LINE & GENERATOR
VAC + VPP
D ON
COM
G
RG = 220
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OTHER FIGURES Maximum power dissipation vs RMS on state current. RMS on-state current vs ambient temperature, case temperature and package Relative variation of thermal impedance junction to ambient vs pulse duration and package Relative variation of gate trigger current vs junction temperature Relative variation of holding and latching current vs junction Relative variation of dV/dt vs Tj Relative variation of (dV/dt)c vs (di/dt)c Surge peak on-state current vs number of cycles Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of It. On-state characteristics (maximal values) Thermal resistance junction to ambient vs copper surface under tab Relative variation of critical (di/dt)c vs junction temperature
Fig. 1: Maximum power dissipation versus RMS on-state current.
P(W)
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
180
=180
Fig. 2-1: RMS on-state current versus tab or lead temperature.
IT(RMS)(A)
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3
DIL-8 SOT-223 =180
IT(RMS)(A)
0.2 0.1 0.0 0 25 50 75 100 125
Ttab/Tlead(C)
Fig. 2-2: RMS on-state current versus ambient temperature.
IT(RMS)(A)
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125
=180 Printed circuit board FR4 Natural convection S=5cm
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.E+00
1.E-01
Tamb(C)
tp(s)
1.E-02 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
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Fig. 4: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25C]
4.0 3.5 3.0
IGT
Fig. 5: Relative variation of static dV/dt versus junction temperature.
dV/dt [Tj] / dV/dt [Tj = 125C]
8
VOUT=460V
7 6 5 4 3
IL & IH
2.5 2.0 1.5 1.0 0.5
2 1
Tj(C)
0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0 25 50
Tj(C)
75 100 125
Fig. 6: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values).
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 50
Fig. 7: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125C]
VOUT=400V
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
VOUT=400V
20 18 16 14 12 10 8 6 4
(dV/dt)c (V/s)
2 0 25 50
Tj(C)
75 100 125
Fig. 8: Surge peak on-state current versus number of cycles.
ITSM(A)
10 9
t=20ms
Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
ITSM(A), It (As)
100.0
Tj initial=25C
8 7 6 5 4 3 2 1 0 1
Non repetitive Tj initial=25C
ITSM
10.0
Repetitive Tab=105C
1.0
It
Number of cycles
0.1
10 100 1000
tp(ms)
0.01 0.10 1.00 10.00
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Fig. 10: values).
ITM(A)
10.00
Tj max. : Vto=0.8V Rd=300m
On-state
characteristics
(maximum
Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35m)
Rth(j-a)(C/W)
130 120 110 100 90 80
SOT-223
1.00
Tj=125C
70 60
Tj=25C
50 40 30 20
0.10
VTM(V)
0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10 0 0.0 0.5 1.0 1.5 2.0
S(cm)
2.5 3.0 3.5 4.0 4.5 5.0
ORDERING INFORMATION
ACS
AC Switch Number of switches
1
10
-
7
S
X
Package N = SOT-223 B2 = DIL-8 Gate Sensitivity S= 10mA
VDRM 7 = 700V IT(RMS) 10 = 1.0A
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ACS110-7SN/SB2
PACKAGE OUTLINE MECHANICAL DATA SOT-223 REF.
A A1 B e1 D B1
PIN 1 2 3 DESCRIPTION GATE DRAIN BASE COLLECTOR
c V
SOURCE EMITTER DRAIN COLLECTOR
4
HE
4
1
2
3
e
A A1 B B1 c D e e1 E H V
DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 1.80 0.02 0.10 0.001 0.60 0.70 0.85 0.024 0.027 2.90 3.00 3.15 0.114 0.118 0.24 0.26 0.35 0.009 0.010 6.30 6.50 6.70 0.248 0.256 2.3 0.090 4.6 0.181 3.30 3.50 3.70 0.130 0.138 6.70 7.00 7.30 0.264 0.276 10 max
Max. 0.071 0.004 0.033 0.124 0.014 0.264
0.146 0.287
PACKAGE FOOT PRINT SOT-223
Recommended soldering pattern SOT-223
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PACKAGE OUTLINE MECHANICAL DATA DIL-8 DIMENSIONS REF. Millimetres Min.
A2
Inches Typ. Max. 0.21 0.015
Typ. Max. Min. 5.33
A
A
A1
A1 L
0.38 2.92 0.36 1.14 0.20 9.02 7.62 6.10 3.30 0.46 1.52 0.25
A2
c
4.95 0.115 0.130 0.195 0.56 0.014 0.018 0.022 1.78 0.045 0.060 0.070 0.36 0.008 0.010 0.014
b b2 c D E
GAUGE PLANE 0.38
b
b2
e
eA eB
D
8 5
E H
9.27 10.16 0.355 0.365 0.40 7.87 6.35 2.54 7.62 10.92 8.26 0.30 0.310 0.325
E1
1 4
E1 e eA eB L
7.11 0.240 0.25 0.280 0.10 0.30 0.430
2.92
3.30
3.81 0.115 0.130 0.15
OTHER INFORMATION
Ordering type ACS110-7SN ACS110-7SB2
s
Marking ACS1107S ACS1107S
Package SOT-223 DIL8
Weight 0.12 g 0.6 g
Base qty 1000 50
Delivery mode Tape & reel Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10

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